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Hynix to ramp new $13.5bn NAND fab

The fab, designated M15 semiconductor is in Cheongju, North Chungcheong Province. It cost $13.5 billion.

First silicon will be  72-layer 3D NAND. Next year it will introduce 96-layer NAND to the production mix.

Samsung is building its second NAND fab in Xian, China with an investment of $7 billion.

Last month Toshiba opened Fab 6 in Yokkaichi to build NAND which cost $4.5 billion.